2N21A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N21A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO22
2N21A Transistor Equivalent Substitute - Cross-Reference Search
2N21A Datasheet (PDF)
0.1. Size:141K ixys
de475-102n21a.pdf
de475-102n21a.pdf
DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 24 A 30MHz Maximum Frequency RDS(on) Symbol Test Conditions Maximum Ratings 0.45 TJ = 25C to 150C VDSS 1000 V PDC = 1800W TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V T
Datasheet: 2N2195BS , 2N2195S , 2N2196 , 2N2196A , 2N2196B , 2N2197 , 2N2198 , 2N2199 , BC548 , 2N22 , 2N220 , 2N2200 , 2N2201 , 2N2202 , 2N2203 , 2N2204 , 2N2205 .
