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2SD1000LL Specs and Replacement

Type Designator: 2SD1000LL

SMD Transistor Code: LL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 55 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT89

 2SD1000LL Substitution

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2SD1000LL datasheet

 6.1. Size:282K  cn shikues

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2SD1000LL

2SD1000 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 0.8 A Power Dissipation Ptot 625 ... See More ⇒

 7.1. Size:218K  nec

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2SD1000LL

... See More ⇒

 7.2. Size:1152K  kexin

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2SD1000LL

SMD Type Transistors NPN Transistors 2SD1000 Features 1.70 0.1 Low collector saturation voltage. VCE(sat) ... See More ⇒

Detailed specifications: 2SC996, 2SC997, 2SC998, 2SC999, 2SC999A, 2SD100, 2SD1000, 2SD1000LK, 13009, 2SD1000LM, 2SD1001, 2SD1001FK, 2SD1001FL, 2SD1001FM, 2SD1002, 2SD1003, 2SD1004

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