2SD1000LM Specs and Replacement
Type Designator: 2SD1000LM
SMD Transistor Code: LM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT89
2SD1000LM Substitution
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2SD1000LM datasheet
2SD1000 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 0.8 A Power Dissipation Ptot 625 ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1000 Features 1.70 0.1 Low collector saturation voltage. VCE(sat) ... See More ⇒
Detailed specifications: 2SC997, 2SC998, 2SC999, 2SC999A, 2SD100, 2SD1000, 2SD1000LK, 2SD1000LL, 2N3906, 2SD1001, 2SD1001FK, 2SD1001FL, 2SD1001FM, 2SD1002, 2SD1003, 2SD1004, 2SD1005
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