2SD1070 Specs and Replacement
Type Designator: 2SD1070
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SPECIAL
2SD1070 Substitution
- BJT ⓘ Cross-Reference Search
2SD1070 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1070 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 2SD1065Q, 2SD1065R, 2SD1065S, 2SD1066, 2SD1067, 2SD1068, 2SD1069, 2SD107, 8050, 2SD1071, 2SD1072, 2SD1073, 2SD1074, 2SD1075, 2SD1076, 2SD1077, 2SD1077L
Keywords - 2SD1070 pdf specs
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