2SD1070 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1070 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low saturation voltage APPLICATIONS Audio power amplifiers Relay and solenoid drivers Motor controls General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1072 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Darlington Power Transistor 2SD1071 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay & solenoid drivers Motor controls General purpose power amplifiers Including zener diode ABSOLUTE MAXIMUM