All Transistors. 2SD1180 Datasheet

 

2SD1180 Datasheet and Replacement


   Type Designator: 2SD1180
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218
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2SD1180 Datasheet (PDF)

 ..1. Size:183K  inchange semiconductor
 2sd1180.pdf pdf_icon

2SD1180

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL

 8.1. Size:505K  1
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2SD1180

 8.2. Size:227K  toshiba
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 8.3. Size:135K  rohm
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2SD1180

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD1187 | A614 | 2SD1187Y | 2SC3734

Keywords - 2SD1180 transistor datasheet

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