All Transistors. 2SD1180 Datasheet

 

2SD1180 Datasheet and Replacement


   Type Designator: 2SD1180
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218
 

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2SD1180 Datasheet (PDF)

 ..1. Size:183K  inchange semiconductor
 2sd1180.pdf pdf_icon

2SD1180

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL

 8.1. Size:505K  1
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2SD1180

 8.2. Size:227K  toshiba
 2sd1187.pdf pdf_icon

2SD1180

 8.3. Size:135K  rohm
 2sd1189.pdf pdf_icon

2SD1180

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Datasheet: 2SD1176 , 2SD1176A , 2SD1177 , 2SD1177B , 2SD1177C , 2SD1178 , 2SD1179 , 2SD118 , A1015 , 2SD1181 , 2SD1182 , 2SD1183 , 2SD1184 , 2SD1185 , 2SD1186 , 2SD1187 , 2SD1187O .

History: MP1545 | MP1535 | ET431

Keywords - 2SD1180 transistor datasheet

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