All Transistors. 2SD1180 Datasheet

 

2SD1180 Datasheet and Replacement


   Type Designator: 2SD1180
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218
 

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2SD1180 Datasheet (PDF)

 ..1. Size:183K  inchange semiconductor
 2sd1180.pdf pdf_icon

2SD1180

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1180DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOLow collector saturation voltageWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio and radio frequency power amplifiersapplications.ABSOL

 8.1. Size:505K  1
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2SD1180

 8.2. Size:227K  toshiba
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2SD1180

 8.3. Size:135K  rohm
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2SD1180

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KRC406V | EMH51 | 2N743A

Keywords - 2SD1180 transistor datasheet

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