All Transistors. 2SD1411O Datasheet

 

2SD1411O Datasheet and Replacement


   Type Designator: 2SD1411O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220F
 

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2SD1411O Datasheet (PDF)

 7.1. Size:184K  toshiba
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2SD1411O

 7.2. Size:216K  toshiba
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2SD1411O

 7.3. Size:215K  inchange semiconductor
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2SD1411O

isc Silicon NPN Power Transistor 2SD1411DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1018Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

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Datasheet: 2SD1408Y , 2SD1409 , 2SD1409O , 2SD1409R , 2SD1409Y , 2SD141 , 2SD1410 , 2SD1411 , 2SC5200 , 2SD1411Y , 2SD1412 , 2SD1412O , 2SD1412Y , 2SD1413 , 2SD1414 , 2SD1415 , 2SD1416 .

History: MPS3250 | MPQ3962

Keywords - 2SD1411O transistor datasheet

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