2SD350 Datasheet. Specs and Replacement
Type Designator: 2SD350 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 22 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 11 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 3
Package: TO3
📄📄 Copy
2SD350 Substitution
- BJT ⓘ Cross-Reference Search
2SD350 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD350 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD350A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒
Detailed specifications: 2SD343, 2SD344, 2SD345, 2SD346, 2SD347, 2SD348, 2SD349, 2SD35, 2SD718, 2SD350A, 2SD351, 2SD352, 2SD353, 2SD355, 2SD356, 2SD357, 2SD358
Keywords - 2SD350 pdf specs
2SD350 cross reference
2SD350 equivalent finder
2SD350 pdf lookup
2SD350 substitution
2SD350 replacement
BJT Parameters and How They Relate
History: NB024HZ | 2N3763 | 2SA1213-O | NB024HI | NB024FJ | 2SA1615-Z | NB024FT
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116




