All Transistors. 2SD357 Datasheet

 

2SD357 Datasheet and Replacement


   Type Designator: 2SD357
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: TO220
 

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2SD357 Datasheet (PDF)

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2SD357

isc Silicon NPN Power Transistor 2SD357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

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2SD357

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2SD357

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2SD357

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Datasheet: 2SD35 , 2SD350 , 2SD350A , 2SD351 , 2SD352 , 2SD353 , 2SD355 , 2SD356 , A940 , 2SD358 , 2SD359 , 2SD36 , 2SD360 , 2SD361 , 2SD362 , 2SD362N , 2SD362O .

Keywords - 2SD357 transistor datasheet

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 2SD357 equivalent finder
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