2SD435 Specs and Replacement

Type Designator: 2SD435

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

 2SD435 Substitution

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2SD435 datasheet

 9.1. Size:405K  sanyo

 2sd438.pdf pdf_icon

2SD435

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 9.2. Size:78K  no

 2sd439.pdf pdf_icon

2SD435

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 9.3. Size:183K  inchange semiconductor

 2sd437.pdf pdf_icon

2SD435

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD437 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 350V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching regulator applications. ABSOLUTE MAXI... See More ⇒

Detailed specifications: 2SD428, 2SD429, 2SD43, 2SD430, 2SD431, 2SD432, 2SD433, 2SD434, A940, 2SD436, 2SD437, 2SD437W, 2SD438, 2SD438MP, 2SD439, 2SD43A, 2SD44

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