2SD435 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD435
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
2SD435 Transistor Equivalent Substitute - Cross-Reference Search
2SD435 Datasheet (PDF)
9.3. Size:183K inchange semiconductor
2sd437.pdf
2sd437.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD437DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching regulatorapplications.ABSOLUTE MAXI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
