2SD435 Datasheet and Replacement
Type Designator: 2SD435
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
2SD435 Substitution
2SD435 Datasheet (PDF)
2sd437.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD437DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching regulatorapplications.ABSOLUTE MAXI
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BFG520 | AFY20 | MRF313
Keywords - 2SD435 transistor datasheet
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History: BFG520 | AFY20 | MRF313



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