2SD51 Specs and Replacement
Type Designator: 2SD51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
2SD51 Substitution
- BJT ⓘ Cross-Reference Search
2SD51 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD517 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SD506, 2SD507, 2SD5071, 2SD5074, 2SD5075, 2SD5076, 2SD508, 2SD509, 13003, 2SD510, 2SD511, 2SD512, 2SD513, 2SD514, 2SD515, 2SD516, 2SD517
Keywords - 2SD51 pdf specs
2SD51 cross reference
2SD51 equivalent finder
2SD51 pdf lookup
2SD51 substitution
2SD51 replacement
