2SD512 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD512
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 625 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 250 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: MT11
2SD512 Transistor Equivalent Substitute - Cross-Reference Search
2SD512 Datasheet (PDF)
9.1. Size:181K inchange semiconductor
2sd517.pdf
2sd517.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD517DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
