2SD512 Specs and Replacement
Type Designator: 2SD512
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 625 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 250 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: MT11
2SD512 Substitution
- BJT ⓘ Cross-Reference Search
2SD512 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD517 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SD5074, 2SD5075, 2SD5076, 2SD508, 2SD509, 2SD51, 2SD510, 2SD511, S9014, 2SD513, 2SD514, 2SD515, 2SD516, 2SD517, 2SD518, 2SD519, 2SD51A
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