2SD526R Specs and Replacement
Type Designator: 2SD526R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SD526R Substitution
- BJT ⓘ Cross-Reference Search
2SD526R datasheet
ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 4 A Collector Current IC 0.4 A Base Current IB O Power Dissipation (Tc = 25 C) PC 30 W O Junctio... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 E... See More ⇒
Detailed specifications: 2SD523, 2SD524, 2SD525, 2SD525O, 2SD525R, 2SD525Y, 2SD526, 2SD526O, SS8050, 2SD526Y, 2SD528, 2SD528H, 2SD529, 2SD52A, 2SD53, 2SD530, 2SD531
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