2SD560R Specs and Replacement

Type Designator: 2SD560R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO220

 2SD560R Substitution

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2SD560R datasheet

 8.1. Size:90K  nec

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2SD560R

DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such... See More ⇒

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2SD560R

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 8.3. Size:209K  inchange semiconductor

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2SD560R

isc Silicon NPN Darlington Power Transistor 2SD560 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000(Min) @I = 3.0A FE C Low Saturation Voltage Complement to Type 2SB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and l... See More ⇒

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Detailed specifications: 2SD555, 2SD556, 2SD557, 2SD558, 2SD55A, 2SD56, 2SD560, 2SD560O, 2N5401, 2SD560Y, 2SD565, 2SD568, 2SD568O, 2SD568R, 2SD568Y, 2SD569, 2SD569O

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