All Transistors. 2SD560R Datasheet

 

2SD560R Datasheet and Replacement


   Type Designator: 2SD560R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO220
 

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2SD560R Datasheet (PDF)

 8.1. Size:90K  nec
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2SD560R

DATA SHEETSILICON POWER TRANSISTOR2SD560NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD560 is a mold power transistor developed for low- ORDERING INFORMATIONfrequency power amplifiers and low-speed switching. This transistor isOrdering Name Packageideal for direct driving from the IC output of devices such

 8.2. Size:209K  fuji
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2SD560R

 8.3. Size:209K  inchange semiconductor
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2SD560R

isc Silicon NPN Darlington Power Transistor 2SD560DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 2000(Min) @I = 3.0AFE CLow Saturation VoltageComplement to Type 2SB601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and l

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Datasheet: 2SD555 , 2SD556 , 2SD557 , 2SD558 , 2SD55A , 2SD56 , 2SD560 , 2SD560O , TIP41 , 2SD560Y , 2SD565 , 2SD568 , 2SD568O , 2SD568R , 2SD568Y , 2SD569 , 2SD569O .

Keywords - 2SD560R transistor datasheet

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