2SD575L Datasheet. Specs and Replacement

Type Designator: 2SD575L  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2

Noise Figure, dB: -

Package: TO3

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2SD575L datasheet

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2SD575L

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2SD575L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD570 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.3. Size:181K  inchange semiconductor

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2SD575L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD577 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

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Detailed specifications: 2SD57, 2SD570, 2SD571, 2SD572, 2SD573, 2SD574, 2SD574A, 2SD575, TIP31C, 2SD576, 2SD577, 2SD578, 2SD578A, 2SD579, 2SD579A, 2SD58, 2SD580

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