2SD612K Specs and Replacement

Type Designator: 2SD612K

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 312

Noise Figure, dB: -

Package: TO126

 2SD612K Substitution

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2SD612K datasheet

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2SD612K

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 ..2. Size:201K  inchange semiconductor

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2SD612K

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas... See More ⇒

 8.1. Size:238K  sanyo

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2SD612K

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 8.2. Size:214K  inchange semiconductor

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2SD612K

isc Silicon NPN Power Transistor 2SD612 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V(Min.) (BR)CEO High Collector Dissipation Wide Area of Safe Operation Complement to Type 2SB632 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

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Detailed specifications: 2SD606, 2SD608, 2SD608A, 2SD61, 2SD610, 2SD611, 2SD611A, 2SD612, D667, 2SD613, 2SD613C, 2SD613D, 2SD613E, 2SD613F, 2SD614, 2SD615, 2SD616

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