2SD612K Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD612K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 312
Noise Figure, dB: -
Package: TO126
2SD612K Transistor Equivalent Substitute - Cross-Reference Search
2SD612K Datasheet (PDF)
2sd612k.pdf
Ordering number:341GPNP/NPN Epitaxial Planar Silicon Transistor2SB632, 632K/2SD612, 612K25V/35V, 2A Low-FrequencyPower Amplifier ApplicationsFeatures Package Dimensions High collector dissipation and wide ASO.unit:mm2009B[2SB632, 632K/2SD612, 612K]1 : Emitter2 : Collector3 : Base( ) : 2SB632, 632KJEDEC : TO-126SpecificationsAbsolute Maximum Ratings at Ta = 25
2sd612 2sd612k.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION With TO-126 package Complement to type 2SB632/632K High collector dissipation Wide area of safe operation APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas
2sd612.pdf
isc Silicon NPN Power Transistor 2SD612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V(Min.)(BR)CEOHigh Collector DissipationWide Area of Safe OperationComplement to Type 2SB632Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T
2sd613.pdf
Ordering number:513HPNP/NPN Epitaxial Planar Silicon Transistor2SB633/2SD61385V/6A, AF 25 to 35W Output ApplicationsFeatures Package Dimensions High breakdown voltage, VCEO85V, high current 6A.unit:mm AF25 to 35W output.2010C[2SB633/2SD613]JEDEC : TO-220AB 1 : Base( ) : 2SB633EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta =
2sb633p 2sd613p.pdf
Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec
2sd613.pdf
isc Silicon NPN Power Transistor 2SD613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOComplement to Type 2SB633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100
2sd617.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD617DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MPQ4248
