2SD640 Specs and Replacement

Type Designator: 2SD640

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 2SD640 Substitution

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2SD640 datasheet

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2SD640

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2SD640

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 5A CE(sat) C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applicatio... See More ⇒

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2SD640

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2SD640

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Detailed specifications: 2SD633, 2SD634, 2SD635, 2SD636, 2SD637, 2SD638, 2SD639, 2SD64, 13003, 2SD641, 2SD642, 2SD643, 2SD644, 2SD645, 2SD646, 2SD646A, 2SD647

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