All Transistors. 2SD640 Datasheet

 

2SD640 Datasheet and Replacement


   Type Designator: 2SD640
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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2SD640 Datasheet (PDF)

 ..1. Size:91K  no
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2SD640

 ..2. Size:199K  inchange semiconductor
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2SD640

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 5ACE(sat) CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applicatio

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2SD640

 9.2. Size:98K  toshiba
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2SD640

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Datasheet: 2SD633 , 2SD634 , 2SD635 , 2SD636 , 2SD637 , 2SD638 , 2SD639 , 2SD64 , S8050 , 2SD641 , 2SD642 , 2SD643 , 2SD644 , 2SD645 , 2SD646 , 2SD646A , 2SD647 .

History: 3DD4613H-R | BD909 | MP4053 | 2SB1141R | RN47A1 | 2SC3179 | 2N585

Keywords - 2SD640 transistor datasheet

 2SD640 cross reference
 2SD640 equivalent finder
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