All Transistors. 2SD640 Datasheet

 

2SD640 Datasheet and Replacement


   Type Designator: 2SD640
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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2SD640 Datasheet (PDF)

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2SD640

 ..2. Size:199K  inchange semiconductor
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2SD640

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 5ACE(sat) CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applicatio

 9.1. Size:102K  toshiba
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2SD640

 9.2. Size:98K  toshiba
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2SD640

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | AC176K | 2SC2335 | 2N588A | BC850BR | NPS2221R

Keywords - 2SD640 transistor datasheet

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