2SD641 Specs and Replacement

Type Designator: 2SD641

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 2SD641 Substitution

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2SD641 datasheet

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2SD641

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2SD641

isc Silicon NPN Power Transistor 2SD641 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications. High power amplifier applications. ABSOLUTE MAXI... See More ⇒

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2SD641

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2SD641

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Detailed specifications: 2SD634, 2SD635, 2SD636, 2SD637, 2SD638, 2SD639, 2SD64, 2SD640, 2SD1047, 2SD642, 2SD643, 2SD644, 2SD645, 2SD646, 2SD646A, 2SD647, 2SD647A

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