All Transistors. 2SD641 Datasheet

 

2SD641 Datasheet and Replacement


   Type Designator: 2SD641
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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2SD641 Datasheet (PDF)

 ..1. Size:92K  toshiba
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2SD641

 ..2. Size:205K  inchange semiconductor
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2SD641

isc Silicon NPN Power Transistor 2SD641DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High power amplifier applications.ABSOLUTE MAXI

 9.1. Size:102K  toshiba
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2SD641

 9.2. Size:98K  toshiba
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2SD641

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Datasheet: 2SD634 , 2SD635 , 2SD636 , 2SD637 , 2SD638 , 2SD639 , 2SD64 , 2SD640 , A733 , 2SD642 , 2SD643 , 2SD644 , 2SD645 , 2SD646 , 2SD646A , 2SD647 , 2SD647A .

History: BU413 | BD302 | 2SC3323 | 2SD2179 | MP249 | 2SB1016R | 2SC1407

Keywords - 2SD641 transistor datasheet

 2SD641 cross reference
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