2SD671 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD671
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 280
Noise Figure, dB: -
Package: TO92
2SD671 Transistor Equivalent Substitute - Cross-Reference Search
2SD671 Datasheet (PDF)
2sd679.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD679DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose ampl
2sd673.pdf
isc Silicon NPN Power Transistors 2SD673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SB653Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2
2sd670.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD670DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stage
2sd675.pdf
isc Silicon NPN Power Transistors 2SD675DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB655Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
2sd676.pdf
isc Silicon NPN Power Transistors 2SD676DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 125W(Max)@T =25C CComplement to Type 2SB656Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
