2SD671 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD671 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 75 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 280
Encapsulados: TO92
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2SD671 datasheet
2sd679.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose ampl
2sd673.pdf
isc Silicon NPN Power Transistors 2SD673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2
2sd670.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD670 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stage
Otros transistores... 2SD669AB, 2SD669AC, 2SD669B, 2SD669C, 2SD669D, 2SD67, 2SD670, 2SD670H, 2N2907, 2SD672, 2SD673, 2SD673A, 2SD674, 2SD674A, 2SD675, 2SD675A, 2SD676
Parámetros del transistor bipolar y su interrelación.
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