2SD835 Datasheet. Specs and Replacement

Type Designator: 2SD835  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO220

 2SD835 Substitution

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2SD835 datasheet

 ..1. Size:101K  fuji

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2SD835

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

 ..2. Size:213K  inchange semiconductor

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2SD835

isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION High DC Current Gain- h = 400(Min) @I = 4A FE C Low Collector Saturation Voltage- V = 1.5V(Max.) @ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignitor Relay& solenoid drivers Motor controls Switching regulators ABSOLUTE M... See More ⇒

 9.1. Size:96K  fuji

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2SD835

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

 9.2. Size:125K  fuji

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2SD835

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Detailed specifications: 2SD828, 2SD829, 2SD83, 2SD830, 2SD831, 2SD832, 2SD833, 2SD834, BC557, 2SD836, 2SD836A, 2SD836B, 2SD837, 2SD837A, 2SD837B, 2SD838, 2SD839

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