All Transistors. 2SD835 Datasheet

 

2SD835 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD835
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO220

 2SD835 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD835 Datasheet (PDF)

 ..1. Size:101K  fuji
2sd835.pdf

2SD835 2SD835

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 ..2. Size:213K  inchange semiconductor
2sd835.pdf

2SD835 2SD835

isc Silicon NPN Darlington Power Transistor 2SD835DESCRIPTIONHigh DC Current Gain-: h = 400(Min) @I = 4AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid driversMotor controlsSwitching regulatorsABSOLUTE M

 9.1. Size:96K  fuji
2sd833.pdf

2SD835 2SD835

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.2. Size:125K  fuji
2sd834.pdf

2SD835 2SD835

 9.3. Size:25K  no
2sd838.pdf

2SD835

 9.4. Size:213K  inchange semiconductor
2sd833.pdf

2SD835 2SD835

isc Silicon NPN Darlington Power Transistor 2SD833DESCRIPTIONHigh DC Current Gain-: h = 4000(Min) @I = 3AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power ampli

 9.5. Size:195K  inchange semiconductor
2sd836.pdf

2SD835 2SD835

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD836DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 2AFE CHigh Switching SpeedComplement to Type 2SB750Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a

 9.6. Size:211K  inchange semiconductor
2sd837.pdf

2SD835 2SD835

isc Silicon NPN Darlington Power Transistor 2SD837DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

 9.7. Size:214K  inchange semiconductor
2sd834.pdf

2SD835 2SD835

isc Silicon NPN Darlington Power Transistor 2SD834DESCRIPTIONHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CELow Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CWide Area of Safe OperationHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid drivers

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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