2SD835 Datasheet and Replacement

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION High DC Current Gain- h = 400(Min) @I = 4A FE C Low Collector Saturation Voltage- V = 1.5V(Max.) @ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignitor Relay& solenoid drivers Motor controls Switching regulators ABSOLUTE M... See More ⇒

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

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isc Silicon NPN Darlington Power Transistor 2SD833 DESCRIPTION High DC Current Gain- h = 4000(Min) @I = 3A FE C Low Collector Saturation Voltage- V = 1.5V(Max.) @ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay& solenoid drivers Motor controls General purpose power ampli... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION High DC Current Gain- h = 1000(Min.)@I = 2A FE C High Switching Speed Complement to Type 2SB750 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD837 DESCRIPTION High DC Current Gain- h = 1000(Min.)@I = 3A FE C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒

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