All Transistors. 2SD856A Datasheet

 

2SD856A Datasheet and Replacement


   Type Designator: 2SD856A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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2SD856A Datasheet (PDF)

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2SD856A

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2SD856A

 8.3. Size:213K  inchange semiconductor
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2SD856A

isc Silicon NPN Power Transistor 2SD856DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: NR431DE | 2SD858B | 2SD819 | 2SD844 | 2SD859 | 2SD848 | 2SD848A

Keywords - 2SD856A transistor datasheet

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