2SD856B Datasheet. Specs and Replacement

Type Designator: 2SD856B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

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2SD856B datasheet

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2SD856B

isc Silicon NPN Power Transistor 2SD856 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB761 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

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Detailed specifications: 2SD851, 2SD852, 2SD854, 2SD855, 2SD855A, 2SD855B, 2SD856, 2SD856A, 9014, 2SD857, 2SD857A, 2SD857B, 2SD858, 2SD858A, 2SD858B, 2SD859, 2SD859A

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