All Transistors. 2SD856B Datasheet

 

2SD856B Datasheet and Replacement


   Type Designator: 2SD856B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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2SD856B Datasheet (PDF)

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2SD856B

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2SD856B

 8.3. Size:213K  inchange semiconductor
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2SD856B

isc Silicon NPN Power Transistor 2SD856DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

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Datasheet: 2SD851 , 2SD852 , 2SD854 , 2SD855 , 2SD855A , 2SD855B , 2SD856 , 2SD856A , C3198 , 2SD857 , 2SD857A , 2SD857B , 2SD858 , 2SD858A , 2SD858B , 2SD859 , 2SD859A .

History: 2SA1474 | 2N4071 | 2N1708A | 2N5411 | 2SA1471S | MJE13005K | CHDTA123EUGP

Keywords - 2SD856B transistor datasheet

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