All Transistors. 2SD985Y Datasheet

 

2SD985Y Datasheet and Replacement


   Type Designator: 2SD985Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20000
   Noise Figure, dB: -
   Package: TO126
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2SD985Y Datasheet (PDF)

 8.1. Size:152K  nec
 2sd985 2sd986.pdf pdf_icon

2SD985Y

 8.2. Size:212K  inchange semiconductor
 2sd985.pdf pdf_icon

2SD985Y

isc Silicon NPN Darlington Power Transistor 2SD985DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 60V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC

 8.3. Size:124K  inchange semiconductor
 2sd985 2sd986.pdf pdf_icon

2SD985Y

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | MMBT2222LT1 | DTA123EET1G | 3DD4617H | MP602 | BC278C | 2SD1778

Keywords - 2SD985Y transistor datasheet

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