2SD985Y PDF Specs and Replacement
Type Designator: 2SD985Y
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: TO126
2SD985Y Substitution
2SD985Y PDF detailed specifications
2sd985.pdf
isc Silicon NPN Darlington Power Transistor 2SD985 DESCRIPTION Collector Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 2000(Min) @ I = 1A FE C Low Collector Saturation Voltage Complement to Type 2SB794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS They are suitable for use to operate from IC... See More ⇒
2sd985 2sd986.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2... See More ⇒
Detailed specifications: 2SD978 , 2SD979 , 2SD981 , 2SD982 , 2SD983 , 2SD985 , 2SD985O , 2SD985R , 2SD1047 , 2SD986 , 2SD986O , 2SD986R , 2SD986Y , 2SD987 , 2SD990 , 2SD991 , 2SD991K .
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