2SD987 Datasheet. Specs and Replacement

Type Designator: 2SD987  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

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2SD987 datasheet

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2SD987

isc Silicon NPN Darlington Power Transistor 2SD986 DESCRIPTION Collector Emitter Breakdown Voltage- V = 80V(Min.) (BR)CEO DC Current Gain- h = 2000(Min) @ I = 1A FE C Low Collector Saturation Voltage Complement to Type 2SB795 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS They are suitable for use to operate from IC... See More ⇒

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Detailed specifications: 2SD985, 2SD985O, 2SD985R, 2SD985Y, 2SD986, 2SD986O, 2SD986R, 2SD986Y, S8550, 2SD990, 2SD991, 2SD991K, 2SD992, 2SD993, 2SD994, 2SD995, 2SD997

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