All Transistors. 2SD987 Datasheet

 

2SD987 Datasheet and Replacement


   Type Designator: 2SD987
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
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2SD987 Datasheet (PDF)

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2SD987

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2SD987

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2SD987

 9.3. Size:212K  inchange semiconductor
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2SD987

isc Silicon NPN Darlington Power Transistor 2SD986DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 80V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB795Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: AD701I | BC167

Keywords - 2SD987 transistor datasheet

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