All Transistors. 2SD987 Datasheet

 

2SD987 Datasheet and Replacement


   Type Designator: 2SD987
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
 

 2SD987 Substitution

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2SD987 Datasheet (PDF)

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2SD987

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2SD987

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2SD987

 9.3. Size:212K  inchange semiconductor
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2SD987

isc Silicon NPN Darlington Power Transistor 2SD986DESCRIPTIONCollectorEmitter Breakdown Voltage-: V = 80V(Min.)(BR)CEODC Current Gain-: h = 2000(Min) @ I = 1AFE CLow Collector Saturation VoltageComplement to Type 2SB795Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThey are suitable for use to operate from IC

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Datasheet: 2SD985 , 2SD985O , 2SD985R , 2SD985Y , 2SD986 , 2SD986O , 2SD986R , 2SD986Y , A940 , 2SD990 , 2SD991 , 2SD991K , 2SD992 , 2SD993 , 2SD994 , 2SD995 , 2SD997 .

History: K2123B | ST13 | 2SC1107 | 2SB419 | NESG2101M05 | 2SAR523EB | 2SB53

Keywords - 2SD987 transistor datasheet

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