35DB080D Datasheet, Equivalent, Cross Reference Search
Type Designator: 35DB080D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Noise Figure, dB: -
Package: X240
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .