3N105 Specs and Replacement
Type Designator: 3N105
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Package: TO72
3N105 Substitution
- BJT ⓘ Cross-Reference Search
3N105 datasheet
bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf 
BL3N105 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio... See More ⇒
Detailed specifications: 38387 , 38388 , 38647 , 3N100 , 3N101 , 3N102 , 3N103 , 3N104 , A1013 , 3N106 , 3N107 , 3N108 , 3N109 , 3N110 , 3N111 , 3N112 , 3N113 .
History: 2SC1033A
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