3N108 Datasheet. Specs and Replacement
Type Designator: 3N108 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Package: TO72
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3N108 Substitution
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3N108 datasheet
January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses 3 A, 20 V RDS(ON) = 70 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 95 m @ VGS = 2.5 V It is combined with a low forward drop Schottky that is isolated from the MOSFET, pro... See More ⇒
Detailed specifications: 3N100, 3N101, 3N102, 3N103, 3N104, 3N105, 3N106, 3N107, 2SC2655, 3N109, 3N110, 3N111, 3N112, 3N113, 3N114, 3N115, 3N116
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