All Transistors. 3N108 Datasheet

 

3N108 Datasheet and Replacement


   Type Designator: 3N108
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 12 MHz
   Noise Figure, dB: -
   Package: TO72
 

 3N108 Substitution

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3N108 Datasheet (PDF)

 0.1. Size:108K  fairchild semi
 fdfc3n108.pdf pdf_icon

3N108

January 2004 FDFC3N108 N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses 3 A, 20 V RDS(ON) = 70 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 95 m @ VGS = 2.5 V It is combined with a low forward drop Schottky that is isolated from the MOSFET, pro

Datasheet: 3N100 , 3N101 , 3N102 , 3N103 , 3N104 , 3N105 , 3N106 , 3N107 , 8550 , 3N109 , 3N110 , 3N111 , 3N112 , 3N113 , 3N114 , 3N115 , 3N116 .

History: SGSF661 | 2SD220 | BLY66 | KSA1281 | BFY81 | PBSS303ND

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