3N57 Specs and Replacement
Type Designator: 3N57
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Package: TO12
3N57 Substitution
- BJT ⓘ Cross-Reference Search
3N57 datasheet
WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS D R ... See More ⇒
Detailed specifications: 3N133 , 3N134 , 3N135 , 3N136 , 3N34 , 3N35 , 3N35A , 3N56 , BD136 , 3N62 , 3N63 , 3N64 , 3N65 , 3N66 , 3N67 , 3N68 , 3N68A .
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