9003 Datasheet. Specs and Replacement
Type Designator: 9003
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: TO92
9003 Substitution
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9003 datasheet
TPHR9003NL MOSFETs Silicon N-channel MOS (U-MOS -H) TPHR9003NL TPHR9003NL TPHR9003NL TPHR9003NL 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 16 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 1.... See More ⇒
PMD9003D MOSFET driver Rev. 01 24 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Two transistors and one high-speed switching dio... See More ⇒
Detailed specifications: 7NU73, 7NU74, 8003BBA, 8003BBB, 8050, 80DA020D, 810BLYA, 8550, S8050, 9010, 9011, 9011D, 9011E, 9011F, 9011G, 9011H, 9011I
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