9003 Datasheet and Replacement
Type Designator: 9003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
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9003 Datasheet (PDF)
tphr9003nl.pdf

TPHR9003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPHR9003NLTPHR9003NLTPHR9003NLTPHR9003NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 16 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 1.
pmd9003d.pdf

PMD9003DMOSFET driverRev. 01 24 November 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor andhigh-speed switching diode connected in totem pole configuration in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.1.2 Features Two transistors and one high-speed switching dio
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1051A | LDTA114EM3T5G | 2SB464 | MMBT4122 | 2SC1029 | 2SA843 | 2N1963
Keywords - 9003 transistor datasheet
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History: 2SA1051A | LDTA114EM3T5G | 2SB464 | MMBT4122 | 2SC1029 | 2SA843 | 2N1963



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