AC110 Datasheet, Equivalent, Cross Reference Search

   Type Designator: AC110
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.03 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 80 °C
   Transition Frequency (ft): 0.5 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO1

AC110 Transistor Equivalent Substitute - Cross-Reference Search

AC110 Datasheet (PDF)

0.1. Size:2395K 1
cjac110sn10a.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(onTYP ID 3.4m@10V100V 110A4.5m@4.5VDESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

0.2. Size:2101K 1
cjac110n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.8m@10V30 V110A3.5m@4.5VDESCRIPTION FEATURES

0.3. Size:1662K 1
cjac110sn10.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig

0.4. Size:2101K jiangsu
cjac110n03.pdf