AC110 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

AC110 Datasheet. Specs and Replacement

Type Designator: AC110 📄📄

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.03 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 80 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO1

AC110 Substitution

- BJT ⓘ Cross-Reference Search

AC110 datasheet

0.1. Size:2395K 1

cjac110sn10a.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(onTYP ID 3.4m @10V 100V 110A 4.5m @4.5V DESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA... See More ⇒

0.2. Size:2101K 1

cjac110n03.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES... See More ⇒

0.3. Size:1662K 1

cjac110sn10.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig... See More ⇒

0.4. Size:2101K jiangsu

cjac110n03.pdf pdf_icon