2N2555 Specs and Replacement
Type Designator: 2N2555
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.22 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: MT27
2N2555 Substitution
- BJT ⓘ Cross-Reference Search
2N2555 datasheet
2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)... See More ⇒
Detailed specifications: 2N254, 2N2540, 2N2541, 2N255, 2N2551, 2N2552, 2N2553, 2N2554, S8550, 2N2556, 2N2557, 2N2558, 2N2559, 2N255A, 2N256, 2N2560, 2N2561
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