All Transistors. 2N2555 Datasheet

 

2N2555 Datasheet and Replacement


   Type Designator: 2N2555
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.22 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: MT27
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2N2555 Datasheet (PDF)

 0.1. Size:151K  semtech
 2n25550 2n25551.pdf pdf_icon

2N2555

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

Datasheet: 2N254 , 2N2540 , 2N2541 , 2N255 , 2N2551 , 2N2552 , 2N2553 , 2N2554 , BC327 , 2N2556 , 2N2557 , 2N2558 , 2N2559 , 2N255A , 2N256 , 2N2560 , 2N2561 .

History: CM5160 | 2SB1184 | 2N34-5 | 2N1049A | DTL1642 | 2N2015 | 3DD5G

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