All Transistors. AF113 Datasheet

 

AF113 Datasheet and Replacement


   Type Designator: AF113
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.065 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO1
 

 AF113 Substitution

   - BJT ⓘ Cross-Reference Search

   

AF113 Datasheet (PDF)

 0.1. Size:225K  panasonic
 draf113z.pdf pdf_icon

AF113

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF113ZDRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

Datasheet: AF106N , AF107 , AF108 , AF109 , AF109R , AF110 , AF111 , AF112 , A1015 , AF114 , AF114N , AF115 , AF115N , AF116 , AF116N , AF117 , AF117N .

Keywords - AF113 transistor datasheet

 AF113 cross reference
 AF113 equivalent finder
 AF113 lookup
 AF113 substitution
 AF113 replacement

 

 
Back to Top

 


 
.