All Transistors. AF113 Datasheet

 

AF113 Datasheet, Equivalent, Cross Reference Search


   Type Designator: AF113
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.065 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO1

 AF113 Transistor Equivalent Substitute - Cross-Reference Search

   

AF113 Datasheet (PDF)

 0.1. Size:225K  panasonic
 draf113z.pdf

AF113 AF113

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF113ZDRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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