AF113 Datasheet. Specs and Replacement

Type Designator: AF113  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.065 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO1

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AF113 datasheet

 0.1. Size:225K  panasonic

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AF113

This product complies with the RoHS Directive (EU 2002/95/EC). DRAF113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF113Z DRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Pac... See More ⇒

Detailed specifications: AF106N, AF107, AF108, AF109, AF109R, AF110, AF111, AF112, TIP41, AF114, AF114N, AF115, AF115N, AF116, AF116N, AF117, AF117N

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