AF115N Datasheet. Specs and Replacement

Type Designator: AF115N  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO44

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AF115N datasheet

 9.1. Size:225K  panasonic

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AF115N

This product complies with the RoHS Directive (EU 2002/95/EC). DRAF115E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF115E DRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Packa... See More ⇒

Detailed specifications: AF109R, AF110, AF111, AF112, AF113, AF114, AF114N, AF115, 2SA1943, AF116, AF116N, AF117, AF117N, AF118, AF121, AF121-07, AF121S

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