All Transistors. AF115N Datasheet

 

AF115N Datasheet and Replacement


   Type Designator: AF115N
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO44
 

 AF115N Substitution

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AF115N Datasheet (PDF)

 9.1. Size:225K  panasonic
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AF115N

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF115EDRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka

Datasheet: AF109R , AF110 , AF111 , AF112 , AF113 , AF114 , AF114N , AF115 , BC337 , AF116 , AF116N , AF117 , AF117N , AF118 , AF121 , AF121-07 , AF121S .

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