AF133 Datasheet. Specs and Replacement
Type Designator: AF133 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO72
AF133 Substitution
- BJT ⓘ Cross-Reference Search
AF133 datasheet
AF1333P P-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - Fast Switching Speed with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800m . ID = -550mA Pin Assignments Pin Descrip... See More ⇒
AF1332N N-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - 2KV ESD Rating (Per MIL-STD-883D) with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = 20V RDS (on) = 600m . ID = 600mA Pin Assignments ... See More ⇒
Detailed specifications: AF128, AF128BK, AF128W, AF128Y, AF129, AF130, AF131, AF132, 2SC1815, AF134, AF135, AF136, AF137, AF138, AF139, AF142, AF143
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