All Transistors. AF133 Datasheet

 

AF133 Datasheet and Replacement


   Type Designator: AF133
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.03 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO72
 

 AF133 Substitution

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AF133 Datasheet (PDF)

 0.1. Size:276K  anachip
 af1333p.pdf pdf_icon

AF133

AF1333PP-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - Fast Switching Speed with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800m. ID = -550mA Pin Assignments Pin Descrip

 0.2. Size:263K  anachip
 af1332n.pdf pdf_icon

AF133

AF1332NN-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive The advanced power MOSFET provides the designer - 2KV ESD Rating (Per MIL-STD-883D) with the best combination of fast switching, low - Small Package Outline (SOT323) on-resistance and cost-effectiveness. Product Summary BVDSS = 20V RDS (on) = 600m. ID = 600mA Pin Assignments

Datasheet: AF128 , AF128BK , AF128W , AF128Y , AF129 , AF130 , AF131 , AF132 , 2N2222A , AF134 , AF135 , AF136 , AF137 , AF138 , AF139 , AF142 , AF143 .

Keywords - AF133 transistor datasheet

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