AM0912-080 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM0912-080
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 225 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SO42
AM0912-080 Transistor Equivalent Substitute - Cross-Reference Search
AM0912-080 Datasheet (PDF)
am0912-080.pdf
AM0912-080RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).P 90 W MIN. WITH 13 dB GAINOUT =hermetically sealed.BANDWIDTH 225 MHzORDER CODE BRANDINGAM0912-080 0912-80PIN CONNECTIONDESCRIPTIONTh
am0912-300.pdf
AM0912-300RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.15:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2LFL (S038).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 300 W MIN. WITH 7.0 dB GAIN=OUTORDER CODE.BANDWIDTH 255 MHz BRANDINGAM0912-300 0912-300DESCR
am0912.pdf
AM0912-150RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P = 150 W MIN. WITH 7.5 dB GAINOUT.400 x .500 2LFL (S038).BANDWIDTH = 255MHzhermetically sealedORDER CODE BRANDINGAM0912-150 0912-150PIN CONNECTIONDESCRIPTION
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
