AM2729-125 Datasheet. Specs and Replacement

Type Designator: AM2729-125  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2900 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SO38

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AM2729-125 datasheet

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AM2729-125

AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 125 W MIN. WITH 7.0 dB GAIN OUT = .400 x .500 2LFL (S038) hermetically sealed BRANDING ORDER CODE 2729-125 AM2729-125 DESCRIPTION The AM2729-125 device is a hig... See More ⇒

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AM2729-125

AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138) hermetically sealed .P 105 W MIN. WITH 6.5 dB GAIN OUT = ORDER CODE BRANDING AM2729-110 2729-110 DESCRIPTION PIN CONNE... See More ⇒

Detailed specifications: AM1214-200, AM1214-300, AM1214-325, AM1416-100, AM1416-200, AM1517-012, AM1517-025, AM2729-110, 2SA1837, AM2931-110, AM2931-125, AM80610-018, AM80610-030, AM80814-005, AM80814-025, AM80912-005, AM80912-015

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