All Transistors. AM2729-125 Datasheet

 

AM2729-125 Datasheet and Replacement


   Type Designator: AM2729-125
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO38
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AM2729-125 Datasheet (PDF)

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 am2729-125.pdf pdf_icon

AM2729-125

AM2729-125RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 125 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedBRANDINGORDER CODE2729-125AM2729-125DESCRIPTIONThe AM2729-125 device is a hig

 8.1. Size:61K  st
 am2729.pdf pdf_icon

AM2729-125

AM2729-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138)hermetically sealed.P 105 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM2729-110 2729-110DESCRIPTIONPIN CONNE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 2SD2486 | D60T5050 | HN2C01FU | MUN2140T1G | KRA741U

Keywords - AM2729-125 transistor datasheet

 AM2729-125 cross reference
 AM2729-125 equivalent finder
 AM2729-125 lookup
 AM2729-125 substitution
 AM2729-125 replacement

 

 
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