All Transistors. AM2729-125 Datasheet

 

AM2729-125 Datasheet and Replacement


   Type Designator: AM2729-125
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO38
 

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AM2729-125 Datasheet (PDF)

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AM2729-125

AM2729-125RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 125 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (S038)hermetically sealedBRANDINGORDER CODE2729-125AM2729-125DESCRIPTIONThe AM2729-125 device is a hig

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AM2729-125

AM2729-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE .400 x .500 2L SFL (S138)hermetically sealed.P 105 W MIN. WITH 6.5 dB GAINOUT =ORDER CODE BRANDINGAM2729-110 2729-110DESCRIPTIONPIN CONNE

Datasheet: AM1214-200 , AM1214-300 , AM1214-325 , AM1416-100 , AM1416-200 , AM1517-012 , AM1517-025 , AM2729-110 , BC546 , AM2931-110 , AM2931-125 , AM80610-018 , AM80610-030 , AM80814-005 , AM80814-025 , AM80912-005 , AM80912-015 .

History: KRC118S | 2SC2757

Keywords - AM2729-125 transistor datasheet

 AM2729-125 cross reference
 AM2729-125 equivalent finder
 AM2729-125 lookup
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