All Transistors. AM2931-110 Datasheet

 

AM2931-110 Datasheet and Replacement


   Type Designator: AM2931-110
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: S138
 

 AM2931-110 Substitution

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AM2931-110 Datasheet (PDF)

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AM2931-110

AM2931-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2L SFL (S138).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 105 W MIN. WITH 6.2 dB GAINOUT =ORDER CODE BRANDINGAM2931-110 2931-110DESCRIPTIONPIN CONN

Datasheet: AM1214-300 , AM1214-325 , AM1416-100 , AM1416-200 , AM1517-012 , AM1517-025 , AM2729-110 , AM2729-125 , 8050 , AM2931-125 , AM80610-018 , AM80610-030 , AM80814-005 , AM80814-025 , AM80912-005 , AM80912-015 , AM80912-030 .

History: 2N4115 | BC63916 | BUT11-7 | BCY90B | HSE401 | 2SB1202T | HUN5236

Keywords - AM2931-110 transistor datasheet

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