All Transistors. AM2931-110 Datasheet

 

AM2931-110 Datasheet and Replacement


   Type Designator: AM2931-110
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: S138

 AM2931-110 Transistor Equivalent Substitute - Cross-Reference Search

   

AM2931-110 Datasheet (PDF)

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AM2931-110

AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .500 2L SFL (S138) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 105 W MIN. WITH 6.2 dB GAIN OUT = ORDER CODE BRANDING AM2931-110 2931-110 DESCRIPTION PIN CONN

Datasheet: AM1214-300 , AM1214-325 , AM1416-100 , AM1416-200 , AM1517-012 , AM1517-025 , AM2729-110 , AM2729-125 , BC546 , AM2931-125 , AM80610-018 , AM80610-030 , AM80814-005 , AM80814-025 , AM80912-005 , AM80912-015 , AM80912-030 .

History: 3DD13009K

Keywords - AM2931-110 transistor datasheet

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