All Transistors. AM2931-110 Datasheet

 

AM2931-110 Datasheet and Replacement


   Type Designator: AM2931-110
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 115 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: S138
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AM2931-110 Datasheet (PDF)

 8.1. Size:60K  st
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AM2931-110

AM2931-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2L SFL (S138).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 105 W MIN. WITH 6.2 dB GAINOUT =ORDER CODE BRANDINGAM2931-110 2931-110DESCRIPTIONPIN CONN

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: FZT560 | CH867UPNGP | ET5065 | AFY29 | NJD2873T4G | D40P5 | BFX48

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