AM2931-110 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM2931-110
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3100 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: S138
AM2931-110 Transistor Equivalent Substitute - Cross-Reference Search
AM2931-110 Datasheet (PDF)
8.1. Size:60K st
am2931.pdf
am2931.pdf
AM2931-110RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .500 2L SFL (S138).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 105 W MIN. WITH 6.2 dB GAINOUT =ORDER CODE BRANDINGAM2931-110 2931-110DESCRIPTIONPIN CONN
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
