AM2931-125 Datasheet. Specs and Replacement

Type Designator: AM2931-125  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3100 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SO38

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AM2931-125 datasheet

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AM2931-125

AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .3 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .400 x .500 2L SFL (S138) .METAL/CERAMIC HERMETIC PACKAGE hermetically sealed .P 105 W MIN. WITH 6.2 dB GAIN OUT = ORDER CODE BRANDING AM2931-110 2931-110 DESCRIPTION PIN CONN... See More ⇒

Detailed specifications: AM1214-325, AM1416-100, AM1416-200, AM1517-012, AM1517-025, AM2729-110, AM2729-125, AM2931-110, TIP35C, AM80610-018, AM80610-030, AM80814-005, AM80814-025, AM80912-005, AM80912-015, AM80912-030, AM80912-085

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