All Transistors. AM80610-018 Datasheet

 

AM80610-018 Datasheet, Equivalent, Cross Reference Search


   Type Designator: AM80610-018
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 18 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 960 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SO42

 AM80610-018 Transistor Equivalent Substitute - Cross-Reference Search

   

AM80610-018 Datasheet (PDF)

 5.1. Size:44K  st
 am80610-03.pdf

AM80610-018 AM80610-018

AM80610-030RF & MICROWAVE TRANSISTORSUHF COMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.INPUT/OUTPUT MATCHING.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 8.5 dB GAINOUT =.400 x .400 2NLFL (S042)hermetically sealedORDER CODEBRANDINGAM80610-03080610-30DESCRIPTIONPIN CONNECTIONThe AM80610-030 is a high power, commonbase NPN

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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