All Transistors. AM80814-025 Datasheet

 

AM80814-025 Datasheet and Replacement


   Type Designator: AM80814-025
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: SO38

 AM80814-025 Transistor Equivalent Substitute - Cross-Reference Search

   

AM80814-025 Datasheet (PDF)

 9.1. Size:56K  st
 am808-14.pdf pdf_icon

AM80814-025

AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 25 W MIN. WITH 7.0 dB GAIN OUT = .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM80814-025 80814-25 PIN CONNECTION DESCRIPTION

 9.2. Size:72K  st
 am808-1405.pdf pdf_icon

AM80814-025

AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .310 x .310 2LFL (S064) hermetically sealed .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = ORDER CODE BRANDING AM80814-005 80814-5 PIN CONNECTION DESCRI

Datasheet: AM1517-025 , AM2729-110 , AM2729-125 , AM2931-110 , AM2931-125 , AM80610-018 , AM80610-030 , AM80814-005 , TIP31 , AM80912-005 , AM80912-015 , AM80912-030 , AM80912-085 , AM81214-006 , AM81214-015 , AM81214-030 , AM81214-060 .

Keywords - AM80814-025 transistor datasheet

 AM80814-025 cross reference
 AM80814-025 equivalent finder
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