AM80814-025 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM80814-025
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1400 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SO38
AM80814-025 Transistor Equivalent Substitute - Cross-Reference Search
AM80814-025 Datasheet (PDF)
am808-14.pdf
AM80814-025RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 25 W MIN. WITH 7.0 dB GAINOUT = .400 x .400 2LFL (S036)hermetically sealedORDER CODE BRANDINGAM80814-025 80814-25PIN CONNECTIONDESCRIPTION
am808-1405.pdf
AM80814-005RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.310 x .310 2LFL (S064)hermetically sealed.P 5.0 W MIN. WITH 8.5 dB GAINOUT =ORDER CODE BRANDINGAM80814-005 80814-5PIN CONNECTIONDESCRI
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
