All Transistors. AM80912-085 Datasheet

 

AM80912-085 Datasheet and Replacement


   Type Designator: AM80912-085
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SO42
      - BJT Cross-Reference Search

   

AM80912-085 Datasheet (PDF)

 ..1. Size:66K  st
am80912-085.pdf pdf_icon

AM80912-085

AM80912-085RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT = 85 W MIN. WITH 7.5 dB GAINhermetically sealedORDER CODE BRANDINGAM80912-085 80912-85PIN CONNECTIONDESCRIPTION

 7.1. Size:94K  st
am80912030.pdf pdf_icon

AM80912-085

AM80912-030RF & MICROWAVE TRANSISTORSSPECIALITY AVIONICS/JTIDS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.15:1 VSWR CAPABILITY.LOW RF THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.400 x .400 2LFL (S036).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.P 30 W MIN. WITH 7.8 dB GAIN=OUTBRANDINGORDER CODE80912-30AM80912-030DE

 7.2. Size:58K  st
am8091205.pdf pdf_icon

AM80912-085

AM80912-005RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.310 x .310 2LFL (S064)hermetically sealed.POUT = 6.0 W MIN. WITH 9.3 dB GAINORDER CODE BRANDINGAM80912-005 80912-5PIN CONNECTIONDESCRIPTION

 9.1. Size:94K  st
am809-12.pdf pdf_icon

AM80912-085

AM80912-015RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED. :1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT MATCHING.METAL/CERAMIC HERMETIC PACKAGE.P = 15 W MIN. WITH 8.1 dB GAINOUT.310 x .310 2LFL (S064).BANDWIDTH 255 MHzhermetically sealedORDER CODE BRANDINGAM80912-015 80912-15PIN CONNECTIONDESCRIPTION

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CSD2470 | MCH3245 | CD8550 | 2SD1349 | NB223FH | MRF5812 | KSC5024R

Keywords - AM80912-085 transistor datasheet

 AM80912-085 cross reference
 AM80912-085 equivalent finder
 AM80912-085 lookup
 AM80912-085 substitution
 AM80912-085 replacement

 

 
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