AM81214-015 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM81214-015
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 48 V
Maximum Collector-Emitter Voltage |Vce|: 48 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1400 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SO64
AM81214-015 Transistor Equivalent Substitute - Cross-Reference Search
AM81214-015 Datasheet (PDF)
am81214-030.pdf
AM81214-030RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR:1.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.310 x .310 2LFL (S064)hermetically sealed.P = 26 W MIN. WITH 7.2 dB GAINOUTORDER CODE BRANDINGAM81214-030 81214-30DESCRIPTIONPIN CO
am81214-060.pdf
AM81214-060RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGEDIZED VSWR :1.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042)hermetically sealed.POUT 55 W MIN. WITH 6.6 dB GAIN=ORDER CODE BRANDINGAM81214-060 81214-60DESCRIPTIONPIN C
am81214-006.pdf
AM81214-006RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.310 x .310 2LFL (S064).METAL/CERAMIC HERMETIC PACKAGEhermetically sealed.POUT 5.5 W MIN. WITH 10 dB GAIN=ORDER CODE BRANDINGAM81214-6 81214-6PIN CONNECTIONDESCRIPTIO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
