AM81719-040 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM81719-040
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 42 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 4.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1800 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: M228
AM81719-040 Transistor Equivalent Substitute - Cross-Reference Search
AM81719-040 Datasheet (PDF)
am81719-040.pdf
AM81719-040RF & MICROWAVE TRANSISTORSTELEMETRY APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 7 dB GAINOUT =.400 X .400 2 LFL (M228)hermetically sealedORDER CODEBRANDINGAM81719-04081719-40PIN CONNECTIONDESCRIPTIONThe AM81719-040 is a hig
am81719.pdf
AM81719-030RF & MICROWAVE TRANSISTORSTELEMETRY APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 SQ 2LFL (M147).P 28 W MIN. WITH 6.7 dB GAIN=OUThermetically sealedORDER CODE BRANDINGAM81719-030 81719-030PIN CONNECTIONDESCRIPTIONTh
am81720-0.pdf
AM81720-012RF & MICROWAVE TRANSISTORSCOMMUNICATIONS APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.RUGGIZED VSWR :1.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2LFL (S036)hermetically sealed.P 12 W MIN. WITH 7.4 dB GAINOUT =ORDER CODE BRANDINGAM81720-012 81720-12PIN CONNECTIONDE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
