BC169C Specs and Replacement

Type Designator: BC169C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 85 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 380

Noise Figure, dB: -

Package: TO92

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BC169C datasheet

 9.1. Size:151K  cdil

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BC169C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application. ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BC167 BC168 BC169 UNITS VCEO Collec... See More ⇒

Detailed specifications: BC167A, BC167B, BC168, BC168A, BC168B, BC168C, BC169, BC169B, B647, BC170, BC170A, BC170B, BC170C, BC171, BC171A, BC171B, BC171C

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