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2N2696 Specs and Replacement


   Type Designator: 2N2696
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO18

 2N2696 Transistor Equivalent Substitute - Cross-Reference Search

   

2N2696 detailed specifications

 0.1. Size:11K  semelab
 2n2696csm.pdf pdf_icon

2N2696

2N2696CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 25V A = (0.04 0.004... See More ⇒

 9.1. Size:319K  rca
 2n105 2n206 2n247 2n269 2n301 2n301a 2n331 2n356 2n357 2n358.pdf pdf_icon

2N2696

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 9.2. Size:230K  no
 2n2698.pdf pdf_icon

2N2696

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Detailed specifications: 2N268A , 2N269 , 2N2691 , 2N2691A , 2N2692 , 2N2693 , 2N2694 , 2N2695 , A42 , 2N2697 , 2N2698 , 2N2699 , 2N269A , 2N27 , 2N270 , 2N2706 , 2N2706M .

Keywords - 2N2696 transistor specs

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