2N27 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N27
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 16 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO22

2N27 Transistor Equivalent Substitute - Cross-Reference Search

2N27 Datasheet (PDF)

0.1. Size:584K rca
2n270.pdf

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0.6. Size:164K isahaya
rt2n27m.pdf

RT2N27M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

0.7. Size:61K microelectronics
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