All Transistors. BC879 Datasheet

 

BC879 Datasheet and Replacement


   Type Designator: BC879
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92
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BC879 Datasheet (PDF)

 ..1. Size:50K  philips
 bc875 bc879 4.pdf pdf_icon

BC879

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC875; BC879NPN Darlington transistors1999 May 28Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BC875; BC879FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TPC6701

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