BC879 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC879
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO92
BC879 Transistor Equivalent Substitute - Cross-Reference Search
BC879 Datasheet (PDF)
1.1. bc875 bc879 4.pdf 
Size:50K _philips
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors 1999 May 28 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES PINNING High DC current gain (min. 1000) PIN DESCRIPTION High current (max. 1 A) 1 base Low voltage (max. 80 V) 2 collec
Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .
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