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BC879 PDF Specs and Replacement


   Type Designator: BC879
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92
 

 BC879 Substitution

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BC879 PDF detailed specifications

 ..1. Size:50K  philips
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BC879

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors 1999 May 28 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES PINNING High DC current gain (min. 1000) PIN DESCRIPTION High current (max. 1 A) 1 base Low voltage (max. 80 V) ... See More ⇒

Detailed specifications: BC860CW , BC860CWT1 , BC868 , BC869 , BC875 , BC876 , BC877 , BC878 , TIP2955 , BC880 , BCAP07 , BCAP07A , BCAP07B , BCAP08 , BCAP08A , BCAP08B , BCAP08C .

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