All Transistors. BC879 Datasheet

 

BC879 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC879
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92

 BC879 Transistor Equivalent Substitute - Cross-Reference Search

   

BC879 Datasheet (PDF)

 ..1. Size:50K  philips
 bc875 bc879 4.pdf

BC879 BC879

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC875; BC879NPN Darlington transistors1999 May 28Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BC875; BC879FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB1201S

 

 
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