BC879 Datasheet. Specs and Replacement

Type Designator: BC879  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO92

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BC879 datasheet

 ..1. Size:50K  philips

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BC879

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors 1999 May 28 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BC875; BC879 FEATURES PINNING High DC current gain (min. 1000) PIN DESCRIPTION High current (max. 1 A) 1 base Low voltage (max. 80 V) ... See More ⇒

Detailed specifications: BC860CW, BC860CWT1, BC868, BC869, BC875, BC876, BC877, BC878, TIP2955, BC880, BCAP07, BCAP07A, BCAP07B, BCAP08, BCAP08A, BCAP08B, BCAP08C

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