All Transistors. BC879 Datasheet

 

BC879 Datasheet and Replacement


   Type Designator: BC879
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92
 

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BC879 Datasheet (PDF)

 ..1. Size:50K  philips
 bc875 bc879 4.pdf pdf_icon

BC879

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC875; BC879NPN Darlington transistors1999 May 28Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BC875; BC879FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)

Datasheet: BC860CW , BC860CWT1 , BC868 , BC869 , BC875 , BC876 , BC877 , BC878 , 2SD669 , BC880 , BCAP07 , BCAP07A , BCAP07B , BCAP08 , BCAP08A , BCAP08B , BCAP08C .

History: BC413BP | ED1402B | SGSF423

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