BCR08PN Specs and Replacement
Type Designator: BCR08PN
SMD Transistor Code: WFs
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SO363
BCR08PN Substitution
- BJT ⓘ Cross-Reference Search
BCR08PN datasheet
BCR 08PN NPN/PNP Silicon Digital Tansistor Array Switching circuit, inverter, interface circuit, drive circuit Two (galvanic) internal isolated NPN/PNP Transistor in one package Built in bias resistor (R1=2.2k , R2=47k ) Tape loading orientation Type Marking Ordering Code Pin Configuration Package BCR 08PN WFs Q62702-C2486 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maxim... See More ⇒
BCR08PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit 4 5 3 6 Two (galvanic) internal isolated NPN/PNP 2 1 Transistors in one package Built in bias resistor NPN and PNP (R1=2.2 k , R2=47 k ) C1 B2 E2 6 5 4 Pb-free (RoHS compliant) package R2 Qualified according AEC Q101 R1 TR2 TR1 R1 R2 1 ... See More ⇒
Detailed specifications: BCP628B, BCP628C, BCP68, BCP68T1, BCP68T3, BCP69, BCP69T1, BCP69T3, TIP120, BCR108, BCR108S, BCR108W, BCR10PN, BCR112, BCR116, BCR116W, BCR119
Keywords - BCR08PN pdf specs
BCR08PN cross reference
BCR08PN equivalent finder
BCR08PN pdf lookup
BCR08PN substitution
BCR08PN replacement
