BCR35PN Datasheet, Equivalent, Cross Reference Search
Type Designator: BCR35PN
SMD Transistor Code: WU_WUs
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Collector Capacitance (Cc): 2
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-363
BCR35PN Transistor Equivalent Substitute - Cross-Reference Search
BCR35PN Datasheet (PDF)
bcr35pn.pdf
BCR 35PNNPN/PNP Silicon Digital Tansistor Array Switching circuit, inverter, interface circuit, drive circuit Two (galvanic) internal isolated NPN/PNP Transistor in one package Built in bias resistor (R1=10k, R2=47k)Tape loading orientationType Marking Ordering Code Pin Configuration PackageBCR 35PN WUs Q62702-C2495 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363Maxim
bcr35pn.pdf
BCR35PNNPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit4536 Two (galvanic) internal isolated NPN/PNP21 Transistors in one package Built in bias resistor NPN and PNP (R1=10 k, R2=47 k)C1 B2 E26 5 4 Pb-free (ROHS compliant) packageR2 Qualified according AEC Q101R1 TR2TR1 R1R21
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 50A02CH-TL-H | 2SC4617-R
History: 50A02CH-TL-H | 2SC4617-R
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