BCR35PN Specs and Replacement

Type Designator: BCR35PN

SMD Transistor Code: WU_WUs

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT-363

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BCR35PN datasheet

 ..1. Size:62K  siemens

 bcr35pn.pdf pdf_icon

BCR35PN

BCR 35PN NPN/PNP Silicon Digital Tansistor Array Switching circuit, inverter, interface circuit, drive circuit Two (galvanic) internal isolated NPN/PNP Transistor in one package Built in bias resistor (R1=10k , R2=47k ) Tape loading orientation Type Marking Ordering Code Pin Configuration Package BCR 35PN WUs Q62702-C2495 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363 Maxim... See More ⇒

 ..2. Size:528K  infineon

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BCR35PN

BCR35PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit 4 5 3 6 Two (galvanic) internal isolated NPN/PNP 2 1 Transistors in one package Built in bias resistor NPN and PNP (R1=10 k , R2=47 k ) C1 B2 E2 6 5 4 Pb-free (ROHS compliant) package R2 Qualified according AEC Q101 R1 TR2 TR1 R1 R2 1 ... See More ⇒

Detailed specifications: BCR191S, BCR192, BCR196, BCR196W, BCR198, BCR198S, BCR198W, BCR22PN, 2SC1815, BCR48PN, BCR503, BCR505, BCR512, BCR519, BCR521, BCR523, BCR533

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